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Transport in Metal-Oxide-Semiconductor Structures

Mobile Ions Effects on the Oxide Properties

Produktform: E-Buch Text Elektronisches Buch in proprietärem


Reviewing the state-of-the-art in the field, this volume describes the importance of mobile ions presented in oxide structures. The text defines the MOS structure, and provides an overview of onic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides.

Verlag: Springer Berlin, 106 Seiten

Elektronisches Format: PDF

Erscheinungsdatum: 12.01.2011

96,29 € inkl. MwSt.
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Transport in Metal-Oxide-Semiconductor Structures

Mobile Ions Effects on the Oxide Properties

Produktform: Buch / Einband - fest (Hardcover)


Reviewing the state-of-the-art in the field, this volume describes the importance of mobile ions presented in oxide structures. The text defines the MOS structure, and provides an overview of onic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides.

Verlag: Springer Berlin, Auflage 1, 106 Seiten

Erscheinungsdatum: 16.01.2011

106,99 € inkl. MwSt.
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Transport in Metal-Oxide-Semiconductor Structures

Mobile Ions Effects on the Oxide Properties

Produktform: Buch / Einband - flex.(Paperback)


Reviewing the state-of-the-art in the field, this volume describes the importance of mobile ions presented in oxide structures. The text defines the MOS structure, and provides an overview of onic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides.

Verlag: Springer Berlin, Auflage 1, 106 Seiten

Erscheinungsdatum: 25.02.2013

106,99 € inkl. MwSt.
kostenloser Versand

lieferbar - Lieferzeit 10-15 Werktage

zum Artikel