The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Produktform: Buch / Einband - flex.(Paperback)
This work is addressing device reliability and dynamic switching behavior as main obstacles for a future market launch of AlGaN/GaN-on-Si based power switches. The work is comparing different bias conditions, device designs, process parameter, and epitaxial properties. Charge trapping effects are localized and identified which deteriorate device parameter. Countermeasures are implemented to obtain good system performance and device reliability.
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