Switching Characteristics of Integrated GaN-on-Si Half-Bridge and Driver Circuits
Produktform: Buch / Einband - flex.(Paperback)
This work examines particularities in the switching characteristics of gallium nitride (GaN) half-bridge and driver circuits, which arise from the integration on a common conductive silicon (Si) substrate. Experimental and theoretical investigations on GaN-on-Si half-bridges with drivers contribute to unlock the benefits of monolithic GaN-based power circuit integration for compact, clean switching and efficient power electronics.
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