AUGMENTED SEMICLASSICAL TRANSPORT MODELS FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS
Produktform: Buch / Einband - flex.(Paperback)
Field effect transistors (FETs) with channel material made of a dense
array of perfectly aligned carbon nanotubes (CNTs) have been claimed
to replace silicon FETs in various applications, including energy efficient
high-frequency front-end circuits in communication systems, such as
highly linear and low-noise amplifiers. CNTs are especially suitable for
radio frequency (RF) electronics, mainly owing to their high carrier mobility,
large saturation velocity and small intrinsic capacitance, which are crucially
important for excellent RF-performance.
To support the development of competitive RF-CNTFETs, numerical device
simulations are required to provide a fundamental understanding of the
impact of various physical effects on the device behavior. Additionally, the
optimization of the device design is guided by these device simulations.
They also provide a reference for compact models, which are required for
exploring the potential of RF-CNTFETs in circuits and for benchmarking
with incumbent and other emerging technologies.weiterlesen
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