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Gas Source Molecular Beam Epitaxy

Growth and Properties of Phosphorus Containing III-V Heterostructures

Produktform: Buch / Einband - flex.(Paperback)

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.weiterlesen

Dieser Artikel gehört zu den folgenden Serien

Sprache(n): Englisch

ISBN: 978-3-642-78129-2 / 978-3642781292 / 9783642781292

Verlag: Springer Berlin

Erscheinungsdatum: 30.12.2011

Seiten: 428

Auflage: 1

Autor(en): Morton B. Panish, Henryk Temkin

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