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Long-Term Reliability of Nanometer VLSI Systems

Modeling, Analysis and Optimization

Produktform: E-Buch Text Elektronisches Buch in proprietärem

This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices.  The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction.  Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. weiterlesen

Elektronisches Format: PDF

Sprache(n): Englisch

ISBN: 978-3-030-26172-6 / 978-3030261726 / 9783030261726

Verlag: Springer International Publishing

Erscheinungsdatum: 12.09.2019

Seiten: 460

Autor(en): Sheldon Tan, Mehdi Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, Saman Kiamehr

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