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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

Produktform: E-Buch Text Elektronisches Buch in proprietärem

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.weiterlesen

Dieser Artikel gehört zu den folgenden Serien

Elektronisches Format: PDF

Sprache(n): Englisch

ISBN: 978-3-319-01165-3 / 978-3319011653 / 9783319011653

Verlag: Springer International Publishing

Erscheinungsdatum: 07.10.2013

Seiten: 199

Autor(en): Ghanshyam Singh, Viranjay M. Srivastava

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