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Research on the Radiation Effects and Compact Model of SiGe HBT

Produktform: Buch / Einband - fest (Hardcover)

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique. weiterlesen

Dieser Artikel gehört zu den folgenden Serien

Sprache(n): Englisch

ISBN: 978-9811046117 / 978-9811046117 / 9789811046117

Verlag: Springer Singapore

Erscheinungsdatum: 02.11.2017

Seiten: 168

Auflage: 1

Autor(en): Yabin Sun

106,99 € inkl. MwSt.
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