Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors
Produktform: Buch / Einband - flex.(Paperback)
In power electronics designs, the evaluation and prediction of potential fault
conditions on semiconductors is essential for achieving safe operation and reliability,
being short circuit (SC) one of the most probable and destructive failures.
Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon
Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with
outstanding performance, reshaping the power electronics landscape. In comparison
to Silicon (Si), SiC and GaN power semiconductors physically present
smaller chip areas, higher maximum internal electric fields, and higher current
densities. Such characteristics yield a much faster rise of the devices’ internal
temperatures, worsening their SC performance.
In this way, this dissertation consists of a comprehensive investigation about
SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing
their particularities on SC performance by comparison with that of
Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences
besides a review of available SC protection methods is presented.weiterlesen
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