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Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits

Produktform: Buch / Einband - flex.(Paperback)

As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical model which comprehends the effect of device and circuit characteristics, such as device size, bias, and circuit layout, which are under the control of the circuit designer on the variability of circuit performance. The distinctive feature of the CAD tool described in this book is its ability to accurately model and simulate the effect in both intra- and inter-die process variability on analog/digital circuits, accounting for the effects of the aforementioned device and circuit characteristics. serves as an excellent reference for those working in the field, and may be used as the text for an advanced course on the subject. weiterlesen

Dieser Artikel gehört zu den folgenden Serien

Sprache(n): Englisch

ISBN: 978-1-4613-6379-8 / 978-1461363798 / 9781461363798

Verlag: Springer US

Erscheinungsdatum: 27.09.2012

Seiten: 190

Auflage: 1

Zielgruppe: Research

Autor(en): Mohammed Ismail, Christopher Michael

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